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| SUD40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.022 @ VGS = 10 V 0.025 @ VGS = 4.5 V ID (A)a 30 30 D TO-252 G Drain Connected to Tab G D S S Order Number: SUD40N06-25L N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAR EAR PD TJ, Tstg Limit "20 30 30 100 34 34 58 75 1.4b, 2.5c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Free Air, FR4 Board Mount Maximum Junction-to-Ambient Free Air, Vertical Mount Maximum Junction-to-Case Notes: a. Package limited. b. Free air, vertical mount. c. Surface mounted on 1" x 1" FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70264 S-57741--Rev. G, 31-Mar-98 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 60 110 2.0 Unit _C/W 2-1 SUD40N06-25L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A DiS OS Drain-Source On-State R i Drain Source On State Resistanceb VGS = 10 V, ID = 20 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 20 0.022 0.043 0.053 0.025 S W 60 1.0 2.0 3.0 "100 1 50 150 A mA A nA V Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0 9 W V, 0.9 ID ^ 20 A, VGEN = 10 V RG = 2 5 W A V, 2.5 VDS = 30 V VGS = 10 V ID = 40 A V, V, VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 1800 350 100 40 9 10 10 9 28 7 20 20 ns 50 15 60 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C) Pulsed Current Diode Forward Voltage Reverse Recovery Time ISM VSD trr IF = 20 A, VGS = 0 V IF = 20 A, di/dt = 100 A/ms 1.0 48 20 1.5 100 A V ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70264 S-57741--Rev. G, 31-Mar-98 SUD40N06-25L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 6V VGS = 10, 9, 8, 7 V 80 45 I D - Drain Current (A) 60 4V 40 I D - Drain Current (A) 5V 60 Transfer Characteristics 30 15 TC = 125_C 25_C -55_C 20 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 70 TC = -55_C 60 r DS(on) - On-Resistance ( ) g fs - Transconductance (S) 50 40 30 20 10 0 0 12 24 36 48 60 0.03 25_C 125_C 0.04 On-Resistance vs. Drain Current VGS = 4.5 V VGS = 10 V 0.02 0.01 0 0 15 30 ID - Drain Current (A) 45 60 ID - Drain Current (A) Capacitance 3000 10 Gate Charge V GS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) Ciss 2000 8 VDS = 30 V ID = 20 A 6 1500 4 1000 Coss 500 Crss 2 0 0 10 20 30 40 50 60 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70264 S-57741--Rev. G, 31-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUD40N06-25L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 20 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Drain Current vs. Case Temperature 50 200 100 40 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 100 ms 1 ms Safe Operating Area 30 10 20 10 ms 1 TC = 25_C Single Pulse 100 ms dc, 1 s 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70264 S-57741--Rev. G, 31-Mar-98 10-1 1 3 2-4 |
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